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Tailoring of high-temperature photoluminescence in InAs/GaAs bilayer quantum dot structures
Yu.I. Mazur, Zh.M. Wang, G.G. Tarasov, Vas.P. Kunets, and G.J. Salamo
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
Z.Ya. Zhuchenko
Institute of Semiconductor Physics, National Academy of Sciences, Prospect Nauki 41, 03028 Kiev, Ukraine
H. Kissel
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
Journal of Applied Physics 98, 053515 (2005).
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Abstract:
Temperature-dependent photoluminescence is investigated in bilayer InAs/GaAs quantum dot
structures with constant InAs deposition θ1 in the seed layer, but variable deposition θ2 in both the
second layer and the GaAs spacer layer. It is shown that interlayer coupling, leading to the formation
of asymmetric quantum dot pairs, strengthens the high-temperature photoluminescence and strongly
influences carrier relaxation channels. We report that radiative recombination and carrier capture
efficiency by the quantum dots in the second layer can be tailored using the deposition θ2 and the
GaAs spacer thickness.
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