Large-Signal Modeling of High-Voltage GaAs Power HBTs

M. Rudolph, R. Doerner

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
IEEE MTT-S Int. Microwave Symp. Dig., 2005.
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Abstract:
This paper presents modeling results for newly developed InGaP/GaAs power HBTs operating at bias voltages up to V_ce = 26 V. The devices are flip-chip mounted for heat-sinking and deliver output powers above 10 W. It is shown that the FBH HBT model is capable of describing those devices despite the fact that it was developed originally for standard 'low-voltage' HBTs. This result is an impor- tant statement with respect to circuit design based on this promising technology.

Keywords:
Heterojunction bipolar transistor, semiconductor device modeling, equivalent circuit.

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