Effect of electric field on the probability of optical transitions in InGaAs/GaAs quantum wells observed by photo- and electroreflectance methods

A.N. Pikhtin¹, O.S. Komkov¹, F. Bugge²

¹St. Petersburg State Electrotechnical University, Prof. Popov st. 5, 197376 St. Petersburg, Russia
²Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
physica status solidi (a),Vol. 202(2005)7, pp. 1270 - 1274.
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Abstract:
The influence of an electric field on the energy spectrum and the probability of optical transitions in InGaAs/GaAs single quantum wells (QWs) of different widths has been investigated with photo- and electroreflectance techniques. The electric field in the area of a QW is varied in a wide range and con-trolled by well-defined Franz-Keldysh oscillations. A quadratic red shift of electroreflectance features concerned with interband excitonic transitions in QWs is observed. The electric field dependence of the intensity of these features and calculated data for the probability of optical transitions are compared. There are some field values when transitions that are symmetry-forbidden in zero field are much stronger than symmetry-allowed transitions.

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