 |
Nonresonant tunneling carrier transfer in bilayer asymmetric InAs/GaAs quantum dots
Yu.I. Mazur, Zh.M. Wang, G.G. Tarasov, and G.J. Salamo
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
J.W. Tomm and V. Talalaev
Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Straße 2A, D-12489 Berlin, Germany
H. Kissel
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
Physical Review B 71, 235313 (2005).
© 2005 The American Physical Society. Personal use of this material is permitted. However, permission to reprint/republish this material for
advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists,
or to reuse any copyrighted component of this work in other works must be obtained from The American Physical Society.
Abstract:
Carrier transfer in InAs/GaAs asymmetric quantum dot pairs has been studied by means of continuous-wave
and time-resolved photoluminescence in a bilayer InAs/GaAs quantum dots system. The dependence of the
tunneling time on the thickness of the separation layer is determined and the tunneling time is found to span the
range from 250 to 2500 ps. A microscopic model of carrier transfer, including nonresonant electron tunneling
from a direct into a cross exciton state, with subsequent generation of two direct excitons in adjacent quantum
dot layers, is proposed.
Full version in pdf-format.
|
|
