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High-Performance Laser Diodes With Emission Wavelengths Above 1100 nm and Very Small Vertical Divergence of the Far Field
F. Bugge, H. Wenzel, B. Sumpf, G. Erbert, M. Weyers
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
IEEE Photonics Technology Letters, vol. 17, no. 6, 1145-1147, June (2005).
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Abstract:
The effect of variations in the vertical structure on
the performance of AlGaAs-GaAs laser diodes with an InGaAs
quantum well (QW) emitting around 1120 nm was investigated.
With very thick waveguide layers, more than 95% of the output
power is enclosed in an angle smaller than 35°. This allows the use
of fast axis collimators with a small numerical aperture. Broad area
laser diodes with 100-µm stripe width, an optimized doping profile,
and a double QW emit more than 12 W and show reliable operation at 5 W.
Index Terms:
Epitaxial growth, laser reliability, quantum well (QW) lasers,semiconductor lasers.
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