Application of reflectance anisotropy spectroscopy to laser diode growth in MOVPE

Published in:
Journal of Crystal Growth 276 (2005) 29-36.
© 1999-2005, Elsevier Science B.V.. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Elsevier Science B.V.

Abstract:
The growth of layer structures for visible and near-infrared laser diodes is investigated in metal-organic vapour phase epitaxy (MOVPE) under production-like conditions using reflectance anisotropy spectroscopy (RAS). For this purpose the dependence of the reflectance anisotropy (RA) signal on doping type and level is studied for AlGaAs and AlGaInP. The growth of complete layer structures can then be finger printed by the significant features of the RA spectra. The reproducibility of the growth process is controlled using the RA transients taken with a high time resolution at a fixed photon energy. Additionally, the emission wave length of a GaAsP quantum well (QW) can be correlated to the RA level during QW growth. Information about buried interfaces can also be gained from the RA transients as demonstrated for AlGaInP laser structures.

Keywords:
A3. Metal-organic vapour phase epitaxy; A1. Reflectance anisotropy spectroscopy (RAS/RDS); A1. Insitu control; B3. Edge-emitting laser;B1. AlGaAs; B1. AllnGaP; A1. Doping

Full version in pdf-format.