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High-power, high-efficient 1150 nm quantum well laser
G. Erbert, F. Bugge, J. Fricke, P. Ressel, R. Staske, B. Sumpf, H. Wenzel, M. Weyers, and G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
Conf. Dig. 19th ISLC, Matsue/Japan, IEEE 2004, pp. 41-42, September 2004.
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Abstract:
An efficient laser structure was realized using highly strained InGaAs quantum wells and thick GaAs
waveguide layers. A low divergence of 20° FWHM and reliable 5 W output power from a 60 µm stripe laser was
achieved.
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