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Determination of band offsets in strained InxGa1-xAs/GaAs quantum wells by capacitance-voltage profiling and Schrödinger-Poisson self-consistent simulation
V.I. Zubkov, M.A. Melnik, A.V. Solomonov, E.O. Tsvelev
St. Petersburg Electrotechnical University "LETI", Prof. Popov Str.5, 197376, St. Petersburg, Russia
F. Bugge, M. Weyers, and G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
Published in:
Physical Review B 70, 075312 (2004).
© 2004 The American Physical Society. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the American Physical Society.
Abstract:
The results of capacitance-voltage profiling and numerical simulation of charge carrier distribution and
energy states for strained quantum wells InxGa1-xAs/GaAs (0.06≤x≤0.29) are presented. Precise values of
conduction band offsets for these pseudomorphic QWs have been obtained by means of self-consistent solution
of Schrödingerand Poisson equations and following fitting to experimental data. For the conduction band
offsets in strained InxGa1-xAs/GaAs-QWs the expression ΔEC(x)=0.85x-0.3x2 has been obtained.
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