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SiGe-Based Circuits for Sensor Applications beyond 100 GHz
M. Steinhauer1, H. Irion1, M. Schott2, M. Thiel1, H.-O. Ruoss1, W. Heinrich2
1 Robert Bosch GmbH, Dept. FV/FLO, Robert-Bosch-Platz 1, D-70839 Gerlingen, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
Published in:
IEEE MTT-S Int. Microwave Symp. Dig., 2004, pp. 223-226.
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Abstract:
Key components of sensor front-ends have
been realized for the frequency range beyond 100 GHz in a
SiGe bipolar technology. The circuits presented include
110 GHz push-push and fundamental VCOs, both with up to
0 dBm output power, as well as fixed-frequency oscillators at
121 and 124 GHz. Furthermore, 122 GHz down-conversion
mixers are demonstrated.
Index Terms:
SiGe, MMICs, millimeter-wave circuits, heterojunction bipolar transistors, voltage controlled oscillators, mixers.
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