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Quasi-3-D Simulation of High-Brightness Tapered Lasers
L. Borruel1, S. Sujecki2, P. Moreno1, J. Wykes2, M. Krakowski3, B. Sumpf4, P. Sewell2, S. Auzanneau3, H. Wenzel4, D. Rodríguez1, T. Benson2, E. Larkins2, I. Esquivias1
1 Departamento de Tecnología Fotónica, Universidad Politécnica de Madrid, Madrid 28040, Spain
2 School of Electrical and Electronic Engineering, University of Nottingham, Nottingham NG7 2RD, U.K.
3 Thales Research and Technology France, Domain de Corbeville 91404 Orsay, France
4 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
Published in:
IEEE J. of Quantum Electronics, vol. 40, no. 5, pp. 463-472, May 2004.
© 2004 The IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for
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Abstract:
We present a simulation tool useful to optimize the
design of semiconductor tapered lasers and to study the physical
processes inside of them. This is achieved by using a state-of-the-art
quasi-three-dimensional (quasi-3-D) electrical and thermal model,
coupled to a two-dimensional (2-D) wide-angle beam propagation
method optical model. A calibration procedure of model parameters
is proposed to contribute to the development of reliable simulation
tools. Different laser diodes with a tapered gain section, emitting
at 735 and 975 nm, are used to validate the model through the
extensive comparison of experimental and simulated results. The
suitability of 2-D and 3-D electrical, thermal, and optical models is
discussed in terms accuracy and computational effort.
Index Terms:
Beam quality, filamentation, high-brightness lasers, laser modeling, tapered lasers.
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