Uniqueness Problems in Compact HBT Models Caused by Thermal Effects

Published in:
IEEE Trans. Microwave Theory Tech., vol. 52, no. 5, pp. 1399-1403, May 2004.
© 2004 The IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Abstract:
This paper identifies possible numerical instabilities in compact HBT models, which are introduced by a physical meaningful self-heating description. Removing these possible sources of nonconvergence would deteriorate model accuracy since they originate from the device physics. It is, therefore, necessary to be aware of them during parameter extraction and circuit simulation.

Index Terms:
Equivalent circuit, HBT, semiconductor device modeling.

Full version in pdf-format.