Reliable 1-W CW Operation of High-Brightness Tapered Diode Lasers at 735 nm

B. Sumpf G. Beister, G. Erbert, J. Fricke, A. Knauer, P. Ressel, and G. Tränkle

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany

Published in:
IEEE Photonics Technology Letters, vol. 16, 984-986 (2004).
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Abstract:
The long-term stability of high-brightness diode lasers at 735 nm was investigated. The diodes consist of an index-guided straight section and a gain-guided tapered section. A 1-W continuous-wave operation for 2-mm-long tapered lasers over 3200 h is reported. The experiments demonstrate high reliability with degradation rates below 3.2 x 10^-5 h^-1.

Index Terms:
High-brightness diode lasers, tapered lasers, tensile-strained GaAsP quantum wells.

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