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Properties of As+-implanted and annealed GaAs and InGaAs quantum wells: Structural
and band-structure modifications
J.W. Tomm, V. Strelchuk, and A. Gerhardt
Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, 12489 Berlin, Germany
U. Zeimer, M. Zorn, H. Kissel, and M. Weyers
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
J. Jiménez
Universidad de Valladolid, Fisica de la Materia Condensada, ETSII, 47011 Valladolid, Spain
Published in:
Journal of Applied Physics 95 (3), pp. 1122-1126 (2004).
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Abstract:
Both crystal structure and energy band-structure changes caused by As+ implantation and by
subsequent annealing in GaAs and in an In0.253Ga0.747As quantum well are studied. We demonstrate
that the main implantation impact to the crystal structure is the creation of a large number of point
defects and strong compressive strain of up to -0.1%. Raman and x-ray data demonstrate almost
complete structural recovery for rapid thermal annealing temperatures >600°C. While the lattice
expansion becomes relaxed by annealing, the implantation-induced ionized point defects are still
present up to the highest annealing temperatures applied. Under these circumstances, a 22 meV
blueshift of the heavy-hole-electron (1hh-1e) transition within the quantum well and a substantial
reduction of the nonequilibrium carrier lifetime remain as consequence of implantation.
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