Analysis of strain and composition distribution in laterally strain-modulated InGaAs nanostructures after overgrowth with GaAs or InGaP

U. Zeimer, H. Kirmse*, J. Grenzer**, S. Grigorian**, H. Kissel, A. Knauer, U. Pietsch**, W. Neumann*, M. Weyers, G. Tränkle

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
*Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr.15, 12489 Berlin, Germany
**Universität Potsdam, Institut für Physik, Am Neuen Palais 10, 14415 Potsdam, Germany

Published in:
Inst. Phys. Conf. Ser. No 180 pp. 139-142;
Paper presented at Microsc. Semicond. Mater. Conf., Cambridge, 31 March - 3 April 2003.
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Introduction:
A laterally strain modulated nanostructure containing an InGaAs-single quantum well is overgrown with GaAs or compressively strained InGaP. The second epitaxy leads to an inhomogeneous composition distribution within the filled-in material which is studied by scanning and transmission electron microscopy and grazing incidence X-ray diffraction. The different behaviour of the photoluminescence spectra obtained from the samples overgrown with GaAs or InGaP can be understood using the structural and strain results.

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