Properties of Ion-Implanted High-Power Angled-Grating Distributed-Feedback Lasers
K. Paschke, A. Bogatov, F. Bugge, A.E. Drakin, J. Fricke, R. Güther, A.A. Stratonnikov, H. Wenzel, G. Erbert, G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
Published in:
IEEE Journal of Selected Topics in Quantum Electronics, vol. 9, 1172-1178 (2003).
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Abstract:
An improvement of the linearity of the light-current
characteristics and the beam quality of high-power Alpha-distributed
feedback lasers is achieved by an ion implantation of the regions
outside the contact stripe. The linear part of the light-current characteristics
of 4-mm-long devices emitting at 1060 nm is extended to
P = 1.8 W output power. The times-diffraction-limit factor M2
remains constant, equal to 1.7 over the whole power range. Simulations
of the electro-optical behavior reveal that the improvement is
achieved by a suppression of optical field components which propagate
inside the cavity perpendicular to the facts.
Index Terms:
Angled grating, distributed feedback (DFB) laser, high-power semiconductor laser,
implantation, simulation, slanted Bragg grating.
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