Fabrication and Electrical Performance of Oscillators in GaInP/GaAs-HBT MMIC Technology up to 40 GHz

J. Hilsenbeck, F. Brunner, F. Lenk, J. Würfl

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany

Published in:
Proc. of the 29th Int. Symposium on Compound Semiconductors, Lausanne, Switzerland
Inst. Phys. Conf. Ser. No 174, 239-242 (2003).
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Abstract:
The fabrication and electrical performance of monolithic coplanar 19- and 38-GHz oscillators in GaInP/GaAs-HBT MMIC technology are presented. Both fixed frequency and Voltage Controlled Oscillators (VCOs) have been realized. The fixed frequency oscillators show very low phase noise (PN), in case of the 19-GHz oscillator PN is -96 dBc/Hz, the 38-GHz oscillator reaches -89 dBc/Hz at 100 kHz offset.

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