Spectroscopy of high-density assemblage of InAs/GaAs quantum dots

Z.Ya. Zhuchenko¹, J.W. Tomm², H. Kissel³, Yu.I. Mazur⁴, G.G. Tarasov¹, W.T. Masselink¹

¹Department of Physics, Humboldt-Universität zu Berlin, 10115 Berlin, Germany
²Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489 Berlin, Germany
³Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
⁴Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA

Published in:
Proc. of the 29th Int. Symposium on Compound Semiconductors, Lausanne, Switzerland
Inst. Phys. Conf. Ser. No 174, 165-168 (2003).
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Abstract:
High-density arrays of InAs/GaAs quantum dots (QDs) have been studied by means of steady-state and time resolved photoluminescence (PL) within a wide range of laser power. The ground state tunnelling between neighbouring QDs is suggested to be an important relaxation channel defining the PL spectral shape both at very low excitation density and at the temperature elevation. This channel becomes blocked when the QDs ground states population reaches the saturation at high excitation density.

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