Many-body effects as probe of defects presence in heavily doped AlGaAs/InGaAs/GaAs heterostructures

Vas.P. Kunets¹, Z.Ya. Zhuchenko¹, H. Kissel², U. Müller¹, G.G. Tarasov¹, W.T. Masselink¹

¹ Department of Physics, Humboldt-Universität zu Berlin, 10115 Berlin, Germany
² Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany

Published in:
Proc. of the 29th Int. Symposium on Compound Semiconductors, Lausanne, Switzerland
Inst. Phys. Conf. Ser. No 174, 81-84 (2003).
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Abstract:
Strikingly strong many-body enhancement of the oscillator strength for interband transitions is observed in the photoluminescence (PL) of heavily doped pseudomorphic Al_xGa_1-xAs/In_yGa_1-yAs/GaAs heterostructures under condition of the n = 2 subband filling. The many-body excitations reveal a remarkable stability with respect to the thermal and excitation density decay. Such behaviour is addressed the intersub-band coupling in high-density one-component plasma of InGaAs quantum well in the presence of defects localising the heavy holes.

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