 |
Midinfrared intersubband absorption in strain-compensated InGaP/InGaAs superlattices on (001) GaAs
M.P. Semtsiv1, G.G. Tarasov1, W.T. Masselink1, H. Kissel2,
M. Woerner3
1 Department of Physics, Humboldt-Universität zu Berlin, Invalidenstr. 110, 10115 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
3 Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, D-12489 Berlin, Germany
Published in:
Applied Physics Letters 82 (20), pp. 3418-3420, (2003).
© 2003 American Institute of Physics. Personal use of this material is permitted. However, permission to reprint/republish this material for
advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists,
or to reuse any copyrighted component of this work in other works must be obtained from the American Institute of Physics.
Abstract:
Intersubband optical transitions in strain-compensated In0.32Ga0.68As-In0.32Ga0.68P superlattices
grown using gas-source molecular-beam epitaxy on (001)GaAs are investigated by means of
midinfrared absorption and low-temperature photoluminescence. Strong absorption corresponding
to the transition from the first to second electronic subband is measured at wavelengths between 5.6
and 10.5 µm. The data indicate that the conduction band offset between the strained In0.32Ga0.68As
and the strained In0.32Ga0.68P well is 370 meV and the electron effective mass
in the strained In0.32Ga0.68As well is 0.060m0. This material
system is an interesting GaAs-based candidate for applications in midinfrared intersubband emitters and detectors.
Full version in pdf-format.
|
|
