Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors

T. Bergunde^a, B. Henninger^b, M. Lünenbürger^c, M. Heuken^c, M. Weyers^a, J.-T. Zettler^b

^aFerdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
^bLayTec GmbH, Helmholtzstr. 13-14, D-10587 Berlin, Germany
^cAixtron AG Aachen, Kackertstr. 15-17, D-52072 Aachen, Germany

Published in:
Journal of Crystal Growth 248 (2003) 235-239.
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Abstract:
A procedure and set-up for high-precision determination of the true surface temperature of wafers during growth by metalorganic vapour phase epitaxy is described. The reflectance of the surface measured by an EpiRAS ® sensor is used for correcting the signal of a pyrometer for changes in emissivity. This allows for determination of the true surface temperature with a precision of ± 1 °C even for multilayer structures. This high precision allows to determine differences in the temperature of wafers of different size or rotating at different speed in an Aixtron Planetary Reactor ®.

Keywords:
A1. Characterization; A1. Heat transfer; A3. Metalorganic vapour phase epitaxy; B2. Semiconducting III-V materials

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