High-power ridge-waveguide distributed-feedback lasers emitting at 860 nm
H. Wenzel, M. Braun, J. Fricke, A. Klehr, A. Knauer,
P. Ressel, G. Erbert, and G. Tränkle,
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
Published in:
Electronics Letters, 5th December 2002, Vol. 38, No. 25, pp. 1676-1677.
© 2002 The IEE.
Abstract:
Data are presented describing distributed-feedback lasers emitting at 860 nm in a single transverse
and longitudinal mode up to 300 mW. The lasers have a second order grating formed into an
InGaP/GaAsP/InGaP multilayer structure embedded in the p-AlGaAs cladding layer.
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