Plakette

Power RF-Operation of AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

R. Lossy1, P. Heymann1, J. Würfl1, N. Chaturvedi1, S. Müller2 and K. Köhler2
1Ferdinand-Braun-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
2Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg, Germany
 
Published in:
GAAS2002: The European Gallium Arsenide & related III-V Compounds Application Symposium Proceedings, 23-24 Sept.2002 Milan,
published by CMP Europe ISBN 0-86213-213-4.

Abstract:
We report on the technology and microwave characterization of AlGaN/GaN power HEMTs on SiC substrate. DC and S-parameter are discussed, together with load-pull results on devices up to 4 mm gate width. A power density of 5.2 W/mm is obtained for devices up to 2 mm gate width. The maximum power level achieved is 13.8 W at 2 GHz.

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