Real-time calibration of wafer temperature, growth rate and composition by
optical in-situ techniques during AlxGa1-xAs growth in MOVPE
K. Haberlanda,b, A. Kaluzac, M. Zornd, M. Pristovseka, H. Hardtdegenc, M. Weyersd, J.-T. Zettlera,b, and W. Richtera
a Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, D-10623 Berlin, Germany
b LayTec Gesellschaft für in-situ und Nano-Sensorik mbH, Helmholtzstr. 13-14, D-10587 Berlin, Germany
c Forschungszentrum Jülich, Institut für Schicht- und Ionentechnik, D-52425 Jülich, Germany
d Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
Published in:
Journal of Crystal Growth, 240 (2002), pp. 87-97.
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Abstract:
In this paper we report a novel technique, based on optical measurements, to measure the true temperature of the
wafer surface during epitaxial growth. It will be shown that this temperature can deviate considerably from the
susceptor temperature measured with thermocouples or pyrometers. For this purpose we employed combined in-situ
reflectance anisotropy spectroscopy and spectroscopic reflectance measurements in a number of different metal-organic
vapor phase epitaxy (MOVPE) reactors. Measurements have been performed on rotating and non-rotating samples
during growth of GaAs, AlAs and
Keywords:
A1. Characterization; A1. In-situ monitoring; A1. Wafer temperature; A1. Ternary composition; A3. Metalorganic vapor
phase epitaxy; B2. Semiconducting aluminium compounds; B2. Semiconducting gallium compounds
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