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W-Band Flip-Chip Interconnects on Thin-Film Substrate
F.J. Schmückle1, A. Jentzsch1, H. Oppermann2,
K. Riepe3, and W. Heinrich1
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
2 Fraunhofer IZM, D-13355 Berlin, Germany
3 United Monolithic Semiconductors GmbH, D-89081 Ulm, Germany
Published in:
IEEE MTT-S Int. Microwave Symp. Dig., 2002, 1393-1396.
© 2002 The IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for
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Abstract:
A flip-chip approach is presented using a thin-film microstrip line (TFMSL) on silicon as carrier substrate.
Thin-film technology allows to employ cheap low-resistivity Si wafers without degrading mm-wave performance.
By means of 3D em simulation, an optimized interconnect is designed for the 77 GHz band. Measurements of test
strutures up to 100 GHz demonstrate the potential of this approach.
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