High-brightness 735 nm tapered diode lasers

B. Sumpf, R. Hülsewede, G. Erbert, C. Dzionk, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, and G. Tränkle

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany

Published in:
Electronics Letters, Vol. 38, No. 4, S. 183-184, 2002.
© 2002 The IEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEE.

Abstract:
High brightness 735 nm single emitter tapered diode lasers were manufactured and analysed. A beam propagation factor M² smaller than 1.4 is achieved up to an output power of 2 W.

Full version in pdf-format.