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2 W reliable operation of λ = 735 nm GaAsP/AlGaAs laser diodes
B. Sumpf,
G. Beister, G. Erbert, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, and G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
Published in:
Electron. Lett., vol. 37, no. 6, pp. 351-353 (2001).
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Abstract:
Reliable operation of 735 nm laser diodes based on a tensile-strained GaAsP quantum well
embedded in an AlGaAs large optical cavity structure is reported. The 100 µm stripe
width laser diodes were aged at a record high output power of 2 W for 2000 hours. The degradation
rates were < 3.6 × 10-5h-1.
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