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High-power diode lasers with small vertical beam divergence emitting at 808 nm
H. Wenzel,
F. Bugge, G. Erbert, R. Hülsewede, R. Staske, and G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
Published in:
Electron. Lett., vol. 37, no. 16, pp. 1024-1026 (2001).
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Abstract:
A new waveguiding scheme for high-power diode lasers based on high-index quarter-wave reflecting
layers inserted into the cladding layers is presented. For 808 nm lasers, a small vertical
far-field angle of 18°, a low threshold current density of 280 A/cm2 and a high
conversion efficiency of 50% are simultaneously obtained.
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