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Micromachined 60 GHz GaAs Power Sensor with Integrated Receiving Antenna
K. Mutamba, K. Beilenhoff1, A. Megej,
R. Doerner2,
E. Genc, A. Fleckenstein, P. Heymann2, J. Dickmann3, C. Woelk3, H. L. Hartnagel
Institut für Hochfrequenztechnik, Technische Universität Darmstadt, Merckstr. 25, 64283 Darmstadt, Germany
1 now with United Monolithic Semiconductors S.A.S., BP 46, 91401 Orsay Cedex, France
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
3 DaimlerChrysler AG Research Center, Wilhelm-Runge-Str. 11, 89081 Ulm, Germany
Published in:
IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, pp. 2235-2238 (2001).
© Copyright 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for
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Abstract:
A micromachined 60 GHz GaAs power sensor with a monolithically-integrated receiving antenna will be presented.
In this sensor configuration thermoelectrical properties of AlGaAs/GaAs heterostructures are used, so that
no external dc power supply is needed. First measurements with separate sensor and antenna strutures on the
same chip have shown a broadband sensor response as well as an excellent matching between the antenna and
the sensor input.
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