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High-Voltage GaAs Power-HBTs for Base-Station Amplifiers
P. Kurpas,
F. Brunner, R. Doerner, B. Janke, P. Heymann, A. Maaßdorf, W. Doser*, P. Auxemery**, H. Blanck*, D. Pons**, J. Würfl, and W. Heinrich
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
*ums GmbH, 89081 Ulm, Germany
**ums Orsay, F-91404 Orsay Cedex, France
Published in:
IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, pp. 633-636 (2001).
© Copyright 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for
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Abstract:
Base stations require high-power devices operating at bias voltage around 26 V. This paper reports on GaAs HBTs with
increased breakdown voltage. Transistors on unthinned wafers deliver 3.2 W at 2 GHz for 27 V bias.
100 Ohms output impedance and 74% PAE make them very attractive for base-station amplifiers.
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