 |
High-Power 810-nm GaAsP-AlGaAs Diode Lasers With Narrow Beam Divergence
J. Sebastian,
G. Beister, F. Bugge, F. Buhrandt1, G. Erbert, H.G. Hänsel1, R. Hülsewede, A. Knauer, W. Pittroff, R. Staske, M. Schröder1, H. Wenzel, M. Weyers, G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
1 Jenoptik Laserdiode GmbH
Published in:
IEEE J. Sel. Top. Quantum Electron., vol. 7, no. 2, pp. 334-339 (2001).
© Copyright 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for
advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists,
or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Abstract:
AlGaAs-based large optical cavity (LOC) laser
diodes (LDs) emitting at 808 nm using a tensile-strained GaAsP
quantum-well (QW) were developed. LDs with 1-µm-LOC and
2 µm-LOC structure show a very high continuous wave (CW)
output power (8.9 W), a good wall-plug efficiency (50%) and a
low degradation rate (10-5 h-1). The power-current characteristics
of broad area LDs with the 1-µm-LOC structure having
a higher aluminium content in the waveguide layer exhibit a
higher temperature stability. The 2-µm-LOC diode lasers with
a lower aluminium content and thinner cladding layers has a
slightly smaller vertical far-field divergence and a smaller series
resistance. The 2-µm-LOC structure was used in laser bars. They
have a filling factor of 28% and exhibit a maximum output power
of 148 W with a good beam quality of 7.8° × 39° (full-width
1/e2-power) at 70 W.
Full version in pdf-format.
|
|
