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12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells
F. Bugge,
G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, M. Weyers
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
Published in:
Appl. Phy. Lett., vol. 79, pp. 1965-1967 (2001).
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Abstract:
Highley strained InGaAs quantum wells were grown by metalorganic vapor-phase epitaxy. By
lowering the growth temperature to 530°C, a maximum photoluminescence wavelength of 1192
was achieved. High-power diode lasers with a maximum lasing wavelength of 1175 nm were
fabricated. A continuous-wave output power of 12 W at a heat-sink temperature of 25°C was
obtained at a lasing wavelength of 1120 nm.
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