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Tensile-Strained GaAsP-AlGaAs Laser Diodes for Reliable 1.2-W Continuous-Wave Operation at 735 nm
B. Sumpf,
G. Beister, G. Erbert, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
Published in:
IEEE Photonics Technol. Lett., vol. 13, no. 1, pp. 7-9 (2001).
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Abstract:
Tensile strained GaAsP quantum wells embedded in AlGaAs large optical cavity
structure were investigated at an emission wavelength of 735 nm. 1.2-W continuous-wave
operation for 100-µm stripe width diode lasers over 1000 h is reported. Experiments
with different stripe widths showed a high stability at an output power of 12-mW/µm
stripe widths with degradation rates below 5*10-5 h-1, i.e.,
lifetimes larger than 500 h than could be expected.
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