Scalable GaInP/GaAs HBT Large-Signal Model

M. Rudolph^a, R. Doerner^a, K. Beilenhoff^b, P. Heymann^a

^a Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
^b Technische Universtät Darmstadt, Institut für Hochfrequenztechnik, Merckstr. 25, 64283 Darmstadt, Germany

Published in:
IEEE Trans. Microwave Theory Tech., vol. 48, no. 12, pp. 2370-2376 (2000).
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Abstract:
A scalable large-signal model for heterojunction bipolar transistors (HBTs) is presented in this paper. It allows exact modeling of all transistor parameters from single-finger elementary cells to multifinger power devices. The scaling rules are given in detail. The model includes a new collector description, which accounts for modulation of base-collector capacitance Cjc as well as for base and collector transit times due to temperature effects and high-current injection. The model is verified by comparison with measurements of GaInP/GaAs HBTs

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