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Optimization of MOVPE growth for 650 nm-emitting VCSELs
A. Bhattacharya,
M. Zorn, A. Oster, M. Nasarek, H. Wenzel, J. Sebastian, M. Weyers, G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
Published in:
J. Cryst. Growth, vol. 221, no. 1-4, pp. 663-667 (2000).
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Abstract:
This paper reports on the optimization of the growth of visible-wavelength vertical-cavity surface emitting laser
(VCSEL) diodes by metalorganic vapour-phase epitaxy (MOVPE). The VCSEL structure has an GaInP/AlGaInP
quantum well active zone (AZ) sandwiched between AlGaAs/AlAs distributed Bragg reflectors (DBRs). We present
results on the optimization of the DBR reflectivity and the electrical resistance of the p-DBR and discuss the switching
sequence at the AZ to p-DBR interface which is critical due to the change of the group V component. Using these
optimized parameters 640-655 nm emitting VCSELs could be demonstrated, with a minimum threshold current density
of 2.8 kA/cm2 at 654 nm.
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