Harmonic Tuning of Power Transistors by Active Load-Pull Measurement

Published in:
IEEE Microwave Journal, vol. 43, pp. 22-37 (2000).
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Abstract:
A nonlinear network analyzer combined with an active multiharmonic load-pull system is described. Data acquisition uses an HP 71500 microwave transition analyzer (MTA) and force/sense bias supplies. Complete tuning and monitoring of the incoming and outgoing signals up to the third harmonic provide frequency and time domain characterization of the nonlinear transistor behavior. Signal compression curves, load-pull contours with harmonic tuning, DC and RF IV curves, and dynamic load lines are included. Typical measurements at 2 GHz show the influence of harmonic tuning on the operation of a 1 W power GaAs heterojunction bipolar transistor (HBT).

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