Scalable GaInP/GaAs HBT Large-Signal Model

M. Rudolph^a, R. Doerner^a, K. Beilenhoff^b, and P. Heymann^a

^a Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
^b Technische Universtät Darmstadt, Institut für Hochfrequenztechnik, Merckstr. 25, 64283 Darmstadt, Germany

Published in:
IEEE MTT-S Int. Microwave Symp. Digest, vol. 2, pp. 753-756 (2000).
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Abstract:
A scalable large-signal model for heterojunction bipolar transistors (HBTs) is presented. It allows exact modeling of all transistor parameters from single finger elementary cells to multifinger power devices. The scaling rules are given in detail. The model is verified by comparison with measuremtns of GeInP/GaAs-HBTs.

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