Improved Parameter Extraction of Small-Sized FETs for Low-Power Applications

Published in:
IEEE MTT-S Int. Microwave Symp. Digest, vol. 3, pp. 1389-1392 (2000).
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Abstract:
In low-power applications FETs with small gate width are required. For such devices common extraction methods fail. In particular, extracting source inductance and drain pad capacitance using "cold"-FET measurements is no longer possible. We present an improved method that allows reliable extraction of extrinsic elements for small-sized FETs.

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