Influence of current spreading on the transparency current density of quantum-well lasers

Published in:
Semicond. Sci. Technol. vol. 15, pp. 557-560 (2000).
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Abstract:
We investigate the dependence of the threshold current of broad-area lasers on the stripe width. A comparison of differently deep-etched devices fabricated from the same wafer reveals that the stripe width dependence of the threshold current is caused by the current spreading effect. We propose a simple method to obtain a transparency current density characterizing a particular epitaxial structure without being influenced by current spreading.

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